| PART |
Description |
Maker |
| 0740621004 |
2.00mm (.079) Pitch VHDM? Board-to-Board Backplane Header, Vertical, 8-RowGuide Pin Signal Module, Shield End Version, Pin End Version, 80 Circuits, Pin Length
MOLEX Connector
|
Molex Electronics Ltd.
|
| 0740621003 |
2.00mm (.079) Pitch VHDM? Board-to-Board Backplane Header, Vertical, 8-Row,Guide Pin Signal Module, Shield End Version, Pin End Version, 80 Circuits, Pin Length
MOLEX Connector
|
Molex Electronics Ltd.
|
| UPD703100AGJ-33-UEN UPD703100GJ-33-UEN UPD703101AG |
ROM-less version; Internal RAM: 4K bytes
Mask ROM version; Mask ROM: 96K bytes; Internal RAM: 4K bytes
Mask ROM version; Mask ROM: 128K bytes; Internal RAM: 4K bytes
Flash version; Internal flash: 128K bytes; Internal RAM: 4K bytes
32-bit RISC microcontroller (V850E/MS2:ROMless,Internal RAM: 4 KB)
|
NEC
|
| Q67100-H6423 Q-67106-H6514 Q67106-H6423 PMB2306 PM |
BiCMOS Low-Power Current Mode PWM Controller 8-SOIC -40 to 105
PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2 锁相环频率合成PMB2306R/PMB2306T版本2.2
PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2
|
Infineon
SIEMENS AG
Siemens Semiconductor Group
|
| EETHC2A222CA EETHC2A222DA EETHC2A272CA EETHC2A332C |
Highly miniaturized version (30% smaller than HB series) Can vent construction
Aluminum Electrolytic Capacitors
Highly miniaturized version (30% smaller than HB series)
|
Panasonic Battery Group
Panasonic Semiconductor
|
| BUK475-100A BUK475-100B |
PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)
PowerMOS transistor Isolated version of BUK455-100A/B
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| R1LV0408CSP-7LI R1LV0408CSA-5SI R1LV0408CSA-7LI R1 |
Memory>Low Power SRAM
Wide Temperature Range Version 4M SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M SRAM (512-kword 隆驴 8-bit)
Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4M SRAM (512-kword 8-bit)
|
Renesas Electronics Corporation
HITACHI[Hitachi Semiconductor]
|
| U3666M U3666M-MFP U3666M-MDP |
Baseband Delay Line o.o64 ms (Improved Version of U3665M)
Baseband Delay Line 64 xs (Improved Version of U3665M)
Baseband Delay Line 64 us (Improved Version of U3665M)
|
Atmel
TEMIC[TEMIC Semiconductors]
|
| 150-01J08 146-06J08 150-03J08 150-01J08S 150-06J08 |
NOT RoHS. RF inductor, tunable, Carbonyl J core, shielded (add L" for compliant version)"
NOT RoHS. RF inductor, tunable, Carbonyl J core (add 'L for compliant version)" UNSHIELDED, 0.082 uH - 0.114 uH, VARIABLE INDUCTOR
NOT RoHS. RF inductor, tunable, Carbonyl J core (add 'L for compliant version)" UNSHIELDED, 0.188 uH - 0.292 uH, VARIABLE INDUCTOR
Inductor: RF: Unshielded: 0.049u: 50M: 88: Carbonyl Iron: Radial
|
COILCRAFT INC
Coilcraft, Inc.
|
| JAG32P4 O28.0-JAG32P4-12-30 O28.0-JAG32P4-12-50 |
4 Pad Version
|
Jauch Quartz Gmbh
|
| JXS32P4 |
4 Pad Version 3.2 x 2.5 mm
|
Jauch Quartz Gmbh
|
